transistor (npn) features z small reverse transfer capac itance: cre= 0.55pf(typ.) z low noise figure: nf=2db (typ.) (f=100 mhz) maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 40 v v ceo collector-emitter voltage 30 v v ebo emitter-base voltage 4 v i c collector current -continuous 20 ma p c collector power dissipation 100 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100 a,i e =0 40 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 30 v emitter-base breakdown voltage v (br)ebo i e =100 a,i c =0 4 v collector cut-off current i cbo v cb =40v,i e =0 0.1 a emitter cut-off current i ebo v eb =4v,i c =0 0.5 a dc current gain h fe v ce =6v,i c =1ma 40 200 collector-base time constant cc.r bb v ce =6v,i c =1ma, f=30mh z 25 ps transition frequency f t v ce =6v,i c =1ma, 260 550 mhz reverse transfer capacitance c re v cb =10v,f=1mhz 0.55 pf noise figure nf 2 5 db power gain gpe v cc =6v,i c =1ma,f=100mh z 17 23 db classification of h fe rank r o y range 40-80 70-140 100-200 marking qr qo qy sot-323 1. base 2. emitter 3. collector 2SC4215 1 www.htsemi.com semiconductor jinyu
2 www.htsemi.com semiconductor jinyu 2SC4215
3 www.htsemi.com semiconductor jinyu 2SC4215
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